ترانزیستور قابلمه ای 2N3055 نوع NPN پکیج TO-3

Q2010

Product Category: Bipolar Transistors BJT
Mounting Style: Through Hole
Package / Case: TO-3
Transistor Polarity: NPN
Collector Emitter Voltage VCEO Max: 60 V
Collector Base Voltage VCBO: 100 V
Emitter Base Voltage VEBO: 7 V
Collector-Emitter Saturation Voltage: 1 V
Maximum DC Collector Current: 15 A
Pd Power Dissipation: 115 W
Gain Band Product fT: 3 MHz
Minimum Operating Temperature: 65 C
Maximum Operating Temperature: + 200 C
Brand: STMicroelectronics
Continuous Collector Current: 15 A
DC Collector/Base Gain hfe Min: 20
DC Current Gain hFE Max: 70
Product Type: BJTs Bipolar Transistors