ترانزیستور igbt مدل fgh60n60

Product Category: IGBT Transistors
Technology: Si
Package/Case: TO-247
Mounting Style: Through Hole
Configuration: Single
Collector Emitter Voltage VCEO Max: 600 V
Collector-Emitter Saturation Voltage: 1.9 V
Maximum Gate Emitter Voltage: 20 V, 20 V
Continuous Collector Current at 25 C: 60 A
Pd Power Dissipation: 600 W
Minimum Operating Temperature: 55 C
Maximum Operating Temperature: + 175 C